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• W2896833718 abstract "Total ionizing dose effects induced by 1 MeV electron and 5 MeV proton on the dc electrical characteristics of 200 GHz silicon germanium heterojunction bipolar transistors (SiGe HBTs) were investigated. These results were compared with <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>60</sup> Co gamma irradiation results to understand the linear energy transfer effects on the electrical characteristics of SiGe HBTs. The different electrical parameters like forward and inverse mode Gummel characteristics, excess base current ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${boldsymbol Delta } I_{mathbf {B}}$ </tex-math></inline-formula> ), current gain ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$boldsymbol {h}_{mathbf {FE}}$ </tex-math></inline-formula> ), and output characteristics ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$boldsymbol {I}_{mathbf {C}}$ </tex-math></inline-formula> - <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$boldsymbol {V}_{mathbf {CE}}$ </tex-math></inline-formula> ) were systematically studied before and after irradiation. The electrical characteristics of irradiated SiGe HBTs degrade with an increase in total dose. The more degradation in device parameters was observed in case of 5 MeV proton irradiated HBTs when compared to other radiations. The irradiated devices were also subjected to isochronal annealing to analyze the recovery of electrical parameters." @default.
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• W2896833718 date "2018-12-01" @default.
• W2896833718 modified "2023-10-11" @default.
• W2896833718 title "A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs" @default.
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• W2896833718 doi "https://doi.org/10.1109/tdmr.2018.2875064" @default.
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