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- W2896842581 abstract "In this study, the growth and photoluminescence (PL) properties of InSb/GaSb nano-stripes grown by molecular beam epitaxy on (001) GaSb substrate are reported. In situ reflection high-energy electron diffraction observation during InSb growth shows that the growth of InSb on GaSb surface is in Stranski–Krastanov mode and results in nano-stripe formation. The obtained nano-stripes have rectangular-based structure with the height of 25.2 ± 4.0 nm and they are elongated along [110] direction. PL emission from buried InSb/GaSb nano-stripes shows the emission peak at ≈1850 nm (0.67 eV). According to the emission energy and the structural information, low In content of ≈0.24 in nominally grown InSb/GaSb nano-stripe is estimated. Power-dependent PL spectroscopy shows a linear relation between integrated PL intensity and the excitation power. Thermal activation energy of ≈20 meV from InSb nano-stripe emission is extracted from the temperature-dependent PL spectroscopy." @default.
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- W2896842581 date "2018-10-12" @default.
- W2896842581 modified "2023-09-23" @default.
- W2896842581 title "Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy" @default.
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- W2896842581 doi "https://doi.org/10.1002/pssa.201800498" @default.
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