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- W2896857221 abstract "In the absence of EUV pellicles, EUV masks need to be cleaned frequently. Even after the implementation of the pellicles, EUV masks need to be cleaned multiple times. When pellicle studs need to be removed, aggressive cleaning recipes are required to remove glue from the surface mask. Therefore, surfaces in contact with chemicals during mask cleaning should be stable against aggressive, acidic and basic chemicals. In addition to, chemical durability, EUV masks are repeatedly exposed to EUV and UV radiation. In particular, with increasing the EUV source power, it is expected that EUV mask surface be exposed to EUV light with energy densities > 5 W/cm2 as well as out-of-band radiation in UV region. Such high energy radiation can oxidize Ru cap layer or promote Ruthenium silicide formation under the capping layer. Such mechanism can result in Ruthenium peel –off by multiple cleaning of EUV masks. When acidic chemistries are used to remove particles from pattern EUV masks, absorber layer can be etched and as a result mask CD will change by multiple cleanings. During the chucking process in an EUV scanner, there might be dents form in the backside conductive layer (e.g. CrN) which results in thinning backside conductive layer in the certain areas. Meantime, more aggressive megasonic cleaning is required to remove micron size particles from the backside of the EUV masks. Combination of multiple chucking, dent formation and aggressive cleaning may result in damage in the backside film. Finally, in the EUV masks with OPC sub-resolution-assist-feature (SRAF) can be easily damaged by megasonic during cleaning.This paper will discuss cleaning durability challenges for sub 10 nm half pitch nodes when high power EUV sources expect to be used. In particular, we present our latest results of multiple cleaning of Applied Materials blanks with conventional cleaning chemistries. The change in the EUV reflectivity of Ru cap multilayers by 100x cleaning will be presented. Impact of cleaning on conventional absorber (TaN) and newly developed thin absorber films in Applied Materials will be discussed. The impact of the cleaning processes on the substrate and CrN backside conductive film will be presented. Multiple surface characterization techniques will be used for study of cleaning impact on different films." @default.
- W2896857221 created "2018-10-26" @default.
- W2896857221 creator A5024481966 @default.
- W2896857221 creator A5024592249 @default.
- W2896857221 creator A5055633401 @default.
- W2896857221 creator A5064763019 @default.
- W2896857221 date "2018-10-12" @default.
- W2896857221 modified "2023-09-23" @default.
- W2896857221 title "Cleaning durability of the applied materials EUV mask blanks (Conference Presentation)" @default.
- W2896857221 doi "https://doi.org/10.1117/12.2502808" @default.
- W2896857221 hasPublicationYear "2018" @default.
- W2896857221 type Work @default.
- W2896857221 sameAs 2896857221 @default.
- W2896857221 citedByCount "0" @default.
- W2896857221 crossrefType "proceedings-article" @default.
- W2896857221 hasAuthorship W2896857221A5024481966 @default.
- W2896857221 hasAuthorship W2896857221A5024592249 @default.
- W2896857221 hasAuthorship W2896857221A5055633401 @default.
- W2896857221 hasAuthorship W2896857221A5064763019 @default.
- W2896857221 hasConcept C120665830 @default.
- W2896857221 hasConcept C121332964 @default.
- W2896857221 hasConcept C146024833 @default.
- W2896857221 hasConcept C153385146 @default.
- W2896857221 hasConcept C162996421 @default.
- W2896857221 hasConcept C171250308 @default.
- W2896857221 hasConcept C192562407 @default.
- W2896857221 hasConcept C204223013 @default.
- W2896857221 hasConcept C2779227376 @default.
- W2896857221 hasConcept C49040817 @default.
- W2896857221 hasConcept C520434653 @default.
- W2896857221 hasConceptScore W2896857221C120665830 @default.
- W2896857221 hasConceptScore W2896857221C121332964 @default.
- W2896857221 hasConceptScore W2896857221C146024833 @default.
- W2896857221 hasConceptScore W2896857221C153385146 @default.
- W2896857221 hasConceptScore W2896857221C162996421 @default.
- W2896857221 hasConceptScore W2896857221C171250308 @default.
- W2896857221 hasConceptScore W2896857221C192562407 @default.
- W2896857221 hasConceptScore W2896857221C204223013 @default.
- W2896857221 hasConceptScore W2896857221C2779227376 @default.
- W2896857221 hasConceptScore W2896857221C49040817 @default.
- W2896857221 hasConceptScore W2896857221C520434653 @default.
- W2896857221 hasLocation W28968572211 @default.
- W2896857221 hasOpenAccess W2896857221 @default.
- W2896857221 hasPrimaryLocation W28968572211 @default.
- W2896857221 hasRelatedWork W1673772832 @default.
- W2896857221 hasRelatedWork W1993389193 @default.
- W2896857221 hasRelatedWork W1997709645 @default.
- W2896857221 hasRelatedWork W2031896501 @default.
- W2896857221 hasRelatedWork W2046828604 @default.
- W2896857221 hasRelatedWork W2095812538 @default.
- W2896857221 hasRelatedWork W2280616912 @default.
- W2896857221 hasRelatedWork W2300998316 @default.
- W2896857221 hasRelatedWork W2616832851 @default.
- W2896857221 hasRelatedWork W1860073476 @default.
- W2896857221 isParatext "false" @default.
- W2896857221 isRetracted "false" @default.
- W2896857221 magId "2896857221" @default.
- W2896857221 workType "article" @default.