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• W2896950980 abstract "We have fabricated a resistive memory device made of the ultrathin (1.6–3.6 nm) layer of silicon oxide, for which the electrical hysteresis is hardly induced via the conventional electroforming process or field-driven structural modification because non-dissipative quantum tunneling across it hampers this process. We show that such thin silicon oxide comes to exhibit the hysteretic behavior successfully when a large amount of boron atoms are incorporated into it: a typical ratio of high-to-low resistance is as high as &gt;300 and maintained up to the set/reset cycles of &gt;50000, and the projected retention time is longer than a couple of months. We also propose an electronic model for its hysteretic mechanism where the charge trapping into the boron-induced defects in silicon oxide and the alteration of its energy band near the interfacial region play the active roles." @default.
• W2896950980 created "2018-10-26" @default.
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• W2896950980 date "2018-10-23" @default.
• W2896950980 modified "2023-10-17" @default.
• W2896950980 title "Electrical hysteresis of ultrathin silicon oxides induced by heavy boron doping" @default.
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• W2896950980 doi "https://doi.org/10.1063/1.5039651" @default.
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