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- W2896988012 abstract "Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of $1.1~{mathrm {cm}}^{2}/{mathrm {V}}cdot {mathrm {s}}$ and a small threshold voltage of-1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility ofthe device." @default.
- W2896988012 created "2018-10-26" @default.
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- W2896988012 date "2018-06-01" @default.
- W2896988012 modified "2023-10-02" @default.
- W2896988012 title "Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric" @default.
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- W2896988012 doi "https://doi.org/10.1109/edssc.2018.8487159" @default.
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