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- W2897314176 abstract "A c-axis-aligned crystalline Gd-Al-Zn-O (CAAC Gd-AZO) layer is implemented at the interface between the active layer and dielectric to enhance positive gate bias stress (PBS) stability of In-Ga-Zn-O thin film transistors (IGZO TFTs). The Gd-AZO bulk layer diminishes the root-mean-square (RMS) roughness of the IGZO back channel layer, which leads to the smaller threshold voltage shift $(Delta mathrm {V}_{T})$ of the Gd-AZO/IGZO TFTs than the IGZO/IGZO TFTs." @default.
- W2897314176 created "2018-10-26" @default.
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- W2897314176 date "2018-06-01" @default.
- W2897314176 modified "2023-09-23" @default.
- W2897314176 title "Enhancement Of Positive Bias Stress Stability For IGZO TFTs By A CAAC Gd-AZO Bulk Layer" @default.
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- W2897314176 doi "https://doi.org/10.1109/edssc.2018.8487165" @default.
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