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• W2897420165 abstract "In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short-channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through technology computer-aided design simulations." @default.
• W2897420165 created "2018-10-26" @default.
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• W2897420165 date "2019-01-01" @default.
• W2897420165 modified "2023-10-17" @default.
• W2897420165 title "Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses" @default.
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• W2897420165 doi "https://doi.org/10.1109/tns.2018.2876943" @default.
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