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- W2897549732 abstract "Emulating key synaptic functions in electronic devices is quite significant in bioinspired applications. Artificial synaptic thin film transistors (TFT) offer a promising solution for efficient synapse simulation. Herein, artificial synapses based on indium–gallium–zinc oxide (IGZO) TFT are fabricated and the photoelectric plasticity is investigated. Versatile synaptic functions including paired-pulse facilitation, paired-pulse depression, and short-term memory to long-term memory transition are emulated. More importantly, these synaptic functions can be mediated by modulating the composition ratio of IGZO film. These achievements represent a major advance toward implementation of full synaptic functionality in neuromorphic hardware and the strategy that combines the photonics and the electrics has great prospects in optoelectronic applications." @default.
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- W2897549732 date "2018-10-16" @default.
- W2897549732 modified "2023-10-18" @default.
- W2897549732 title "Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions" @default.
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- W2897549732 doi "https://doi.org/10.1002/aelm.201800556" @default.
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