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- W2897579797 abstract "$Iphantom{rule{0}{0ex}}Iphantom{rule{0}{0ex}}Iensuremath{-}V$ semiconductor nanowires (NWs) with embedded quantum dots (QDs) are promising building blocks for advanced electronic and optoelectronic devices. The authors investigate the properties of the recently discovered QDs that spontaneously form inside GaAs/Ga(N,As) core/shell NWs. The valence-state character of these QDs ranges from pure heavy-hole to mixed heavy- and light-hole, which is attributed to a combination of core/shell-induced strain and local strain due to alloy fluctuations. This finding provides not just insight into the electronic structure of the QDs, but also a means to probe the local strain within NWs, by examining the fine structure of their embedded QDs." @default.
- W2897579797 created "2018-10-26" @default.
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- W2897579797 date "2018-10-16" @default.
- W2897579797 modified "2023-10-16" @default.
- W2897579797 title "N -induced Quantum Dots in GaAs/Ga(N,As) Core/Shell Nanowires: Symmetry, Strain, and Electronic Structure" @default.
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- W2897579797 doi "https://doi.org/10.1103/physrevapplied.10.044040" @default.
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