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- W289758119 abstract "The methods and techniques for chemical, compositional and structural analysis of grain boundaries and other micro-features in polycrystalline semiconductors are reported. These analyses cover the spatial resolution regime from several hundred microns to single atoms. Emerging analysis techniques, including volume-mapping surface analysis and spectroscopic scanning tunneling microscopy, are introduced for diagnostic applications. The limitations and interpretation of data obtained by these characterization approaches are evaluated, especially the limits of spatial resolution. Examples are provided for the neutralization of shallow impurities at Si grain boundaries by hydrogen, and the incorporation of oxygen at internal defects in CuInSe2." @default.
- W289758119 created "2016-06-24" @default.
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- W289758119 date "1989-01-01" @default.
- W289758119 modified "2023-10-09" @default.
- W289758119 title "Atomic-Level Imaging and Microanalysis of Grain Boundaries in Polycrystalline Semiconductors" @default.
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- W289758119 doi "https://doi.org/10.1007/978-3-642-93413-1_13" @default.
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