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• W2897628026 endingPage "38637" @default.
• W2897628026 startingPage "38630" @default.
• W2897628026 abstract "Selective area atomic layer deposition (SA-ALD) offers the potential to replace a lithography step and provide a significant advantage to mitigate pattern errors and relax design rules in semiconductor fabrication. One class of materials that shows promise to enable this selective deposition process are self-assembled monolayers (SAMs). In an effort to more completely understand the ability of these materials to function as barriers for ALD processes and their failure mechanism, a series of SAM derivatives were synthesized and their structure-property relationship explored. These materials incorporate different side group functionalities and were evaluated in the deposition of a sacrificial etch mask. Monolayers with weak supramolecular interactions between components (for example, van der Waals) were found to direct a selective deposition, though they exhibit significant defectivity at and below 100 nm feature sizes. The incorporation of stronger noncovalent supramolecular interacting groups in the monolayer design, such as hydrogen bonding units or pi-pi interactions, did not produce an added benefit over the weaker interacting components. Incorporation of reactive moieties in the monolayer component that enabled the polymerization of an SAM surface, however, provided a more effective barrier, greatly reducing the number and types of defects observed in the selectively deposited ALD film. These reactive monolayers enabled the selective deposition of a film with critical dimensions as low as 15 nm. It was also found that the selectively deposited film functioned as an effective barrier for isotropic etch chemistries, allowing the selective removal of a metal without affecting the surrounding surface. This work enables selective area ALD as a technology through (1) the development of a material that dramatically reduces defectivity and (2) the demonstrated use of the selectively deposited film as an etch mask and its subsequent removal under mild conditions." @default.
• W2897628026 created "2018-10-26" @default.
• W2897628026 creator A5021079745 @default.
• W2897628026 creator A5023612237 @default.
• W2897628026 creator A5024453016 @default.
• W2897628026 creator A5035939715 @default.
• W2897628026 creator A5067356652 @default.
• W2897628026 creator A5072590585 @default.
• W2897628026 creator A5079173979 @default.
• W2897628026 date "2018-10-17" @default.
• W2897628026 modified "2023-10-17" @default.
• W2897628026 title "Fifteen Nanometer Resolved Patterns in Selective Area Atomic Layer Deposition—Defectivity Reduction by Monolayer Design" @default.
• W2897628026 cites W1977657643 @default.
• W2897628026 cites W1983182405 @default.
• W2897628026 cites W2017999328 @default.
• W2897628026 cites W2019653674 @default.
• W2897628026 cites W2023603575 @default.
• W2897628026 cites W2036647549 @default.
• W2897628026 cites W2040794475 @default.
• W2897628026 cites W2044064542 @default.
• W2897628026 cites W2056026722 @default.
• W2897628026 cites W2071341091 @default.
• W2897628026 cites W2084838726 @default.
• W2897628026 cites W2097416349 @default.
• W2897628026 cites W2137032131 @default.
• W2897628026 cites W2138913040 @default.
• W2897628026 cites W2323278452 @default.
• W2897628026 cites W2332780675 @default.
• W2897628026 cites W2336414411 @default.
• W2897628026 cites W2527092151 @default.
• W2897628026 cites W2727726870 @default.
• W2897628026 cites W2752505286 @default.
• W2897628026 cites W2768045810 @default.
• W2897628026 cites W63844608 @default.
• W2897628026 doi "https://doi.org/10.1021/acsami.8b13896" @default.
• W2897628026 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30335930" @default.
• W2897628026 hasPublicationYear "2018" @default.
• W2897628026 type Work @default.
• W2897628026 sameAs 2897628026 @default.
• W2897628026 citedByCount "38" @default.
• W2897628026 countsByYear W28976280262019 @default.
• W2897628026 countsByYear W28976280262020 @default.
• W2897628026 countsByYear W28976280262021 @default.
• W2897628026 countsByYear W28976280262022 @default.
• W2897628026 countsByYear W28976280262023 @default.
• W2897628026 crossrefType "journal-article" @default.
• W2897628026 hasAuthorship W2897628026A5021079745 @default.
• W2897628026 hasAuthorship W2897628026A5023612237 @default.
• W2897628026 hasAuthorship W2897628026A5024453016 @default.
• W2897628026 hasAuthorship W2897628026A5035939715 @default.
• W2897628026 hasAuthorship W2897628026A5067356652 @default.
• W2897628026 hasAuthorship W2897628026A5072590585 @default.
• W2897628026 hasAuthorship W2897628026A5079173979 @default.
• W2897628026 hasConcept C105487726 @default.
• W2897628026 hasConcept C126061179 @default.
• W2897628026 hasConcept C127413603 @default.
• W2897628026 hasConcept C131649739 @default.
• W2897628026 hasConcept C136525101 @default.
• W2897628026 hasConcept C142724271 @default.
• W2897628026 hasConcept C151730666 @default.
• W2897628026 hasConcept C171250308 @default.
• W2897628026 hasConcept C178790620 @default.
• W2897628026 hasConcept C185592680 @default.
• W2897628026 hasConcept C192562407 @default.
• W2897628026 hasConcept C204787440 @default.
• W2897628026 hasConcept C2779227376 @default.
• W2897628026 hasConcept C2816523 @default.
• W2897628026 hasConcept C32909587 @default.
• W2897628026 hasConcept C42360764 @default.
• W2897628026 hasConcept C64297162 @default.
• W2897628026 hasConcept C69544855 @default.
• W2897628026 hasConcept C7070889 @default.
• W2897628026 hasConcept C71924100 @default.
• W2897628026 hasConcept C86803240 @default.
• W2897628026 hasConcept C93275456 @default.
• W2897628026 hasConceptScore W2897628026C105487726 @default.
• W2897628026 hasConceptScore W2897628026C126061179 @default.
• W2897628026 hasConceptScore W2897628026C127413603 @default.
• W2897628026 hasConceptScore W2897628026C131649739 @default.
• W2897628026 hasConceptScore W2897628026C136525101 @default.
• W2897628026 hasConceptScore W2897628026C142724271 @default.
• W2897628026 hasConceptScore W2897628026C151730666 @default.
• W2897628026 hasConceptScore W2897628026C171250308 @default.
• W2897628026 hasConceptScore W2897628026C178790620 @default.
• W2897628026 hasConceptScore W2897628026C185592680 @default.
• W2897628026 hasConceptScore W2897628026C192562407 @default.
• W2897628026 hasConceptScore W2897628026C204787440 @default.
• W2897628026 hasConceptScore W2897628026C2779227376 @default.
• W2897628026 hasConceptScore W2897628026C2816523 @default.
• W2897628026 hasConceptScore W2897628026C32909587 @default.
• W2897628026 hasConceptScore W2897628026C42360764 @default.
• W2897628026 hasConceptScore W2897628026C64297162 @default.
• W2897628026 hasConceptScore W2897628026C69544855 @default.
• W2897628026 hasConceptScore W2897628026C7070889 @default.
• W2897628026 hasConceptScore W2897628026C71924100 @default.
• W2897628026 hasConceptScore W2897628026C86803240 @default.
• W2897628026 hasConceptScore W2897628026C93275456 @default.
• W2897628026 hasFunder F4320307762 @default.

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