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• W2897714630 abstract "In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapphire, which was the substrate with smaller lattice mismatch with NbTiN. We attribute this improvement to a reduction of the NbTiN roughness, which appears associated to the relaxation of the lattice misfit with the substrate. On AlN-on-sapphire, superconducting nanowire single photon detectors (SNSPDs) were fabricated and tested, obtaining external quantum efficiencies that are in excellent agreement with theoretical calculations." @default.
• W2897714630 created "2018-10-26" @default.
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• W2897714630 date "2019-02-07" @default.
• W2897714630 modified "2023-10-16" @default.
• W2897714630 title "Improvement of the critical temperature of NbTiN films on III-nitride substrates" @default.
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• W2897714630 doi "https://doi.org/10.1088/1361-6668/aaf99d" @default.
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