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- W2897734866 abstract "Gallium arsenide (GaAs) is an important compound semiconductor, especially in view of its applicability to wireless as well as opto-electronic devices. However, it is known that GaAs, unlike silicon (Si), does not possess a stable native oxide that can passivate and protect the surface. This letter reports for the first time, the use of ultrashort laser treatment of the GaAs surface for realizing passivating effects. In this work, femtosecond laser-based processing was shown to be effective and more convenient compared to conventional capping processes, due to the laser’s inherent properties that include an almost non-existent heat affected zone (HAZ). The absence of a HAZ implies that there is virtually no thermal damage to the volume of material surrounding a processed region. The surface passivating effects were confirmed by depth-profiling x-ray photoelectron spectroscopic (XPS) measurements. In addition, scanning electron microscopy (SEM) measurements lead to a possible explanation of the mechanism responsible for the passivation.Gallium arsenide (GaAs) is an important compound semiconductor, especially in view of its applicability to wireless as well as opto-electronic devices. However, it is known that GaAs, unlike silicon (Si), does not possess a stable native oxide that can passivate and protect the surface. This letter reports for the first time, the use of ultrashort laser treatment of the GaAs surface for realizing passivating effects. In this work, femtosecond laser-based processing was shown to be effective and more convenient compared to conventional capping processes, due to the laser’s inherent properties that include an almost non-existent heat affected zone (HAZ). The absence of a HAZ implies that there is virtually no thermal damage to the volume of material surrounding a processed region. The surface passivating effects were confirmed by depth-profiling x-ray photoelectron spectroscopic (XPS) measurements. In addition, scanning electron microscopy (SEM) measurements lead to a possible explanation of the mechanism r..." @default.
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- W2897734866 date "1999-01-01" @default.
- W2897734866 modified "2023-09-25" @default.
- W2897734866 title "Advanced processing of n (100) GaAs with femtosecond laser treatment" @default.
- W2897734866 doi "https://doi.org/10.2351/1.5059308" @default.
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