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• W2897777805 abstract "Abstract The interface at NiO and GaAs heterojunction is found to have claudetite phase of As2O3 with monoclinic structure, which increases with oxygen (O2) partial pressure. It is determined that rough interface, caused by recrystallization of GaAs surface along [111] direction, is not the main governing factor for the observed change in growth direction for NiO epitaxial layer from [111] to [001] direction with increase in O2 partial pressure. The out-of-plane and in-plane epitaxial relationships of [111] oriented NiO layer with respect to substrate are [111]NiO || [001]GaAs, [-1-12]NiO || [-1-10]GaAs and [-110]NiO || [-110]GaAs. The interfacial structure of NiO/GaAs heterojunction thus determined can have implications into the characteristics of optoelectronic devices based on this heterojunction." @default.
• W2897777805 created "2018-10-26" @default.
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• W2897777805 date "2019-01-01" @default.
• W2897777805 modified "2023-09-26" @default.
• W2897777805 title "Evaluation of interfacial structure of [111] and [001] oriented epitaxial NiO layers on GaAs substrate by non-destructive techniques" @default.
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• W2897777805 doi "https://doi.org/10.1016/j.vacuum.2018.10.030" @default.
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