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• W2898040103 abstract "In this letter, we demonstrate high-performance vertical solar-blind Schottky photodetectors on MBE-grown homoepitaxial (010)-oriented β-Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> films. The structure, consisting of (100 nm) β-Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /(60 nm) n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>++</sup> β-Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , was grown on a Fe-doped insulating (010) β-Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> substrate. Ni/Au and indium were used as the Schottky and Ohmic contacts, respectively. The devices exhibited a rectification ratio of ~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> with turn-on voltage ~1 V and an ideality factor of 1.31. The extracted Schottky barrier height was 1.4 eV. The photodetectors showed low dark current of 0.3 nA at 5 V with a photo-to-dark current ratio of ~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at 0 V. The devices exhibited a zero-bias responsivity of 4 mA/W at 254 nm corresponding to an external quantum efficiency ~3 %, with a UV-to-visible rejection ratio >10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sup> , showing true solar-blind operation. The transient response of the devices indicated rise/fall times of ~100 ms. Temperature-dependent current-voltage characteristics agree with the thermionic emission model." @default.
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• W2898040103 date "2018-12-01" @default.
• W2898040103 modified "2023-09-25" @default.
• W2898040103 title "MBE-Grown <inline-formula> <tex-math notation=LaTeX>$beta$ </tex-math> </inline-formula>-Ga₂O₃-Based Schottky UV-C Photodetectors With Rectification Ratio ~10⁷" @default.
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• W2898040103 doi "https://doi.org/10.1109/lpt.2018.2874725" @default.
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