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- W2898051033 abstract "Solution-processed organic field-effect transistor (OFET) has great potential in detecting various hazardous gases including nitrogen dioxide (NO2). To overcome the bottleneck of weak gas adsorption/interaction capability in single-semiconductor sensing layer, semiconductor composites are used to enhance the sensing response. Here, we report an OFET-based NO2 sensor whose active layer consists of diluted poly(3-hexylthiophene-2,5-diyl) (P3HT) with poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (poly-TPD). Due to the site-increase effect induced by phase segregation, the 90% diluted device possesses a more than 3-fold enhancement of current responsivity. Furthermore, when the gate voltage is switched from −40 V to 0 V, this device embodies 4.6-fold and 43.6-fold improvements at 0.3 ppm and 30 ppm, respectively. Meanwhile, decent selectivity, environmental stability and an excellent limit of detection of 242.6 ppb are realized." @default.
- W2898051033 created "2018-10-26" @default.
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- W2898051033 date "2019-02-01" @default.
- W2898051033 modified "2023-10-16" @default.
- W2898051033 title "Hole-transporting polymer dilution driven high performance organic transistor-based NO2 gas sensor" @default.
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- W2898051033 doi "https://doi.org/10.1016/j.matlet.2018.10.121" @default.
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