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• W2898277744 abstract "Experimental observation and numerical simulations of sub-nanosecond avalanche switching of Si and ZnSe bulk semiconductor structures initiated by high-voltage pulses with steep (dU / dt > 10 kV/ns) ramp are reported. The measured switching time is ~100ps. The switching is sustainable and repetitive and has negligible jitter. Comparison of the experimental and numerical results suggests that after switching, the whole volume of the structure is uniformly filled with nonequilibrium electron-hole plasma." @default.
• W2898277744 created "2018-11-02" @default.
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• W2898277744 date "2019-01-01" @default.
• W2898277744 modified "2023-09-27" @default.
• W2898277744 title "Picosecond-Range Avalanche Switching of Bulk Semiconductors Triggered by Steep High-Voltage Pulses" @default.
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• W2898277744 doi "https://doi.org/10.1109/tps.2018.2875423" @default.
• W2898277744 hasPublicationYear "2019" @default.
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