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• W2898615657 endingPage "1969" @default.
• W2898615657 startingPage "1959" @default.
• W2898615657 abstract "Abstract The unique structural and physical properties of two-dimensional (2D) atomic layer semiconductors render them promising candidates for electronic or optoelectronic devices. However, the lack of efficient and stable approaches to synthesize large-area thin films with excellent uniformity hinders their realistic applications. In this work, we reported a method involving atomic layer deposition and a chemical vapor deposition chamber to produce few-layer 2H-MoSe 2 thin films with wafer-level uniformity. The reduction of MoO 3 was found indispensable for the successful synthesis of MoSe 2 films due to the low vaporization temperature. Moreover, a metal-semiconductor-metal photodetector (PD) was fabricated and investigated systematically. We extracted an ultrahigh photoresponsivity approaching 101 A/W with concomitantly high external quantum efficiency up to 19,668% due to the produced gain arising from the holes trapped at the metal/MoSe 2 interface, the band tail state contribution, and the photogating effect. A fast response time of 22 ms was observed and attributed to effective nonequilibrium carrier recombination. Additionally, the ultrahigh photoresponsivity and low dark current that originated from Schottky barrier resulted in a record-high specific detectivity of up to 2×10 13 Jones for 2D MoSe 2 /MoS 2 PDs. Our findings revealed a pathway for the development of high-performance PDs based on 2D MoSe 2 that are inexpensive, large area, and suitable for mass production and contribute to a deep understanding of the photoconductivity mechanisms in atomically thin MoSe 2 . We anticipate that these results are generalizable to other layer semiconductors as well." @default.
• W2898615657 created "2018-11-09" @default.
• W2898615657 creator A5034202632 @default.
• W2898615657 creator A5045852077 @default.
• W2898615657 creator A5051986281 @default.
• W2898615657 creator A5061319150 @default.
• W2898615657 creator A5071149622 @default.
• W2898615657 creator A5079539603 @default.
• W2898615657 date "2018-10-30" @default.
• W2898615657 modified "2023-10-17" @default.
• W2898615657 title "Synthesis of few-layer 2H-MoSe2 thin films with wafer-level homogeneity for high-performance photodetector" @default.
• W2898615657 cites W1506408666 @default.
• W2898615657 cites W1770697966 @default.
• W2898615657 cites W1850455154 @default.
• W2898615657 cites W1931771336 @default.
• W2898615657 cites W1965765976 @default.
• W2898615657 cites W1969314684 @default.
• W2898615657 cites W1970537635 @default.
• W2898615657 cites W1979345035 @default.
• W2898615657 cites W1985884979 @default.
• W2898615657 cites W1986922216 @default.
• W2898615657 cites W1992472539 @default.
• W2898615657 cites W1998042844 @default.
• W2898615657 cites W1999476436 @default.
• W2898615657 cites W2011899447 @default.
• W2898615657 cites W2019577968 @default.
• W2898615657 cites W2020156088 @default.
• W2898615657 cites W2023249057 @default.
• W2898615657 cites W2037429351 @default.
• W2898615657 cites W2039418304 @default.
• W2898615657 cites W2039699055 @default.
• W2898615657 cites W2045988635 @default.
• W2898615657 cites W2047331480 @default.
• W2898615657 cites W2051105944 @default.
• W2898615657 cites W2066036884 @default.
• W2898615657 cites W2078010004 @default.
• W2898615657 cites W2078204579 @default.
• W2898615657 cites W2095477275 @default.
• W2898615657 cites W2096329902 @default.
• W2898615657 cites W2108102346 @default.
• W2898615657 cites W2118996755 @default.
• W2898615657 cites W2123510746 @default.
• W2898615657 cites W2128748887 @default.
• W2898615657 cites W2135037917 @default.
• W2898615657 cites W2139085751 @default.
• W2898615657 cites W2149362513 @default.
• W2898615657 cites W2154401728 @default.
• W2898615657 cites W2159078685 @default.
• W2898615657 cites W2236635117 @default.
• W2898615657 cites W2315677603 @default.
• W2898615657 cites W2320627808 @default.
• W2898615657 cites W2320971741 @default.
• W2898615657 cites W2343250281 @default.
• W2898615657 cites W2416083210 @default.
• W2898615657 cites W2464563468 @default.
• W2898615657 cites W2469075463 @default.
• W2898615657 cites W2475921357 @default.
• W2898615657 cites W2520023595 @default.
• W2898615657 cites W2552352610 @default.
• W2898615657 cites W2557092610 @default.
• W2898615657 cites W2566203273 @default.
• W2898615657 cites W2595608834 @default.
• W2898615657 cites W2622847231 @default.
• W2898615657 cites W2744336678 @default.
• W2898615657 cites W2763048613 @default.
• W2898615657 cites W2765780411 @default.
• W2898615657 cites W2765842065 @default.
• W2898615657 cites W2767427635 @default.
• W2898615657 cites W2783493167 @default.
• W2898615657 cites W2885731584 @default.
• W2898615657 cites W2886218640 @default.
• W2898615657 cites W3101223577 @default.
• W2898615657 cites W3101684524 @default.
• W2898615657 cites W3105489360 @default.
• W2898615657 doi "https://doi.org/10.1515/nanoph-2018-0153" @default.
• W2898615657 hasPublicationYear "2018" @default.
• W2898615657 type Work @default.
• W2898615657 sameAs 2898615657 @default.
• W2898615657 citedByCount "36" @default.
• W2898615657 countsByYear W28986156572019 @default.
• W2898615657 countsByYear W28986156572020 @default.
• W2898615657 countsByYear W28986156572021 @default.
• W2898615657 countsByYear W28986156572022 @default.
• W2898615657 countsByYear W28986156572023 @default.
• W2898615657 crossrefType "journal-article" @default.
• W2898615657 hasAuthorship W2898615657A5034202632 @default.
• W2898615657 hasAuthorship W2898615657A5045852077 @default.
• W2898615657 hasAuthorship W2898615657A5051986281 @default.
• W2898615657 hasAuthorship W2898615657A5061319150 @default.
• W2898615657 hasAuthorship W2898615657A5071149622 @default.
• W2898615657 hasAuthorship W2898615657A5079539603 @default.
• W2898615657 hasBestOaLocation W28986156571 @default.
• W2898615657 hasConcept C108225325 @default.
• W2898615657 hasConcept C119857082 @default.
• W2898615657 hasConcept C142259097 @default.
• W2898615657 hasConcept C160671074 @default.
• W2898615657 hasConcept C16115445 @default.
• W2898615657 hasConcept C171250308 @default.

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