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- W2898650990 abstract "Abstract Magnetic tunnel junctions (MTJ) are promising candidates for the spintronic devices. They are not only important for the futuristic memory devices but also interesting for their fundamental effects such as tunneling, magnetoresistance, and spin-transfer torque. Thus attempts are made to develop good quality junctions. As the fabrication process is the crucial step to decide the device performance. Therefore, this chapter focuses on the methodology developed for the fabrication of MTJ. To fabricate these devices, first, various layers of MTJ are grown using any method of deposition such as molecular beam epitaxy, radio frequency (RF) sputtering, e-beam evaporation, and ion beam sputtering methods. Thereafter, these grown structures are fabricated to the devices of the size of few nanometers using lithography techniques. Another approach for designing these devices is to use pseudo-masking/metal masking, which is free from lithography process. However, mask formation still need lithography to fabricate devices of smaller size." @default.
- W2898650990 created "2018-11-09" @default.
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- W2898650990 date "2019-01-01" @default.
- W2898650990 modified "2023-10-16" @default.
- W2898650990 title "Fabrication of Magnetic Tunnel Junctions" @default.
- W2898650990 doi "https://doi.org/10.1016/b978-0-08-102414-0.00002-1" @default.
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