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- W2898720025 abstract "This paper discusses the metal-oxidesemiconductor (MOS) solar cells for energy harvesting applications using Al(200nm)/SiO 2 (1.73nm)/Si-p and Al(200nm)/Mg(30nm)/SiO 2 (1.73nm)/Si-p structures. P-type (100) silicon wafers with resistivity of 10 $Omega$.cm were used. The gate oxide was obtained by rapid thermal processing (RTP) and the main parameters studied were extracted by means of electric characterization through IxV curves of the MOS solar cells with areas of 3.24 cm2. A different behavior compared to the cells in literature was observed with lower fill factor (~30)% against (~85)%) attributed to the MOS solar cells under the effect of series resistance (~ 12 $Omega$) and low dark current density (~0.1 $mu$ A/cm2), which determined reproducible electrical characteristics for energy harvesting in indoor environments with conversion efficiencies up to 12.8% and generated power up to 1mW/cm2." @default.
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- W2898720025 date "2018-08-01" @default.
- W2898720025 modified "2023-10-16" @default.
- W2898720025 title "Fabrication and Electrical Characterization of MOS Solar Cells for Energy Harvesting" @default.
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- W2898720025 doi "https://doi.org/10.1109/sbmicro.2018.8511579" @default.
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