FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2898816805> ?p ?o ?g. }

• W2898816805 endingPage "5895" @default.
• W2898816805 startingPage "5887" @default.
• W2898816805 abstract "We evaluate the impact of defects in WO3 thin films on the photoelectrochemical (PEC) properties during water splitting. We study physical defects, such as microsized holes or cracks, by two different deposition techniques: sputtering and atomic layer deposition (ALD). Chemical defects, such as oxygen vacancies, are tailored by different annealing atmospheres, i.e., air, N2, and O2. The results show that the physical defects inside the film increase the resistance for the charge transfer and also result in a higher recombination rate which inhibits the photocurrent generation. Chemical defects yield an increased adsorption of OH groups on the film surface and enhance the PEC efficiency. An excess amount of chemical defects can also inhibit the electron transfer, thus decreasing the photocurrent generation. In this study, the highest performance was obtained for WO3 films deposited by ALD and annealed in air, which have the fewest physical defects and an appropriate amount of oxygen vacancies." @default.
• W2898816805 created "2018-11-09" @default.
• W2898816805 creator A5016283976 @default.
• W2898816805 creator A5061506931 @default.
• W2898816805 creator A5073925736 @default.
• W2898816805 creator A5079178929 @default.
• W2898816805 creator A5087006716 @default.
• W2898816805 creator A5089274995 @default.
• W2898816805 creator A5090497794 @default.
• W2898816805 date "2018-10-30" @default.
• W2898816805 modified "2023-10-18" @default.
• W2898816805 title "Physical and Chemical Defects in WO₃ Thin Films and Their Impact on Photoelectrochemical Water Splitting" @default.
• W2898816805 cites W1544512076 @default.
• W2898816805 cites W1652658253 @default.
• W2898816805 cites W1918311549 @default.
• W2898816805 cites W1971113415 @default.
• W2898816805 cites W1974893531 @default.
• W2898816805 cites W1980243127 @default.
• W2898816805 cites W1982429453 @default.
• W2898816805 cites W1983777877 @default.
• W2898816805 cites W1985673622 @default.
• W2898816805 cites W1985728643 @default.
• W2898816805 cites W2013868953 @default.
• W2898816805 cites W2014769031 @default.
• W2898816805 cites W2020014415 @default.
• W2898816805 cites W2030417593 @default.
• W2898816805 cites W2036740243 @default.
• W2898816805 cites W2042492216 @default.
• W2898816805 cites W2043232751 @default.
• W2898816805 cites W2054838306 @default.
• W2898816805 cites W2062349866 @default.
• W2898816805 cites W2067917133 @default.
• W2898816805 cites W2087711856 @default.
• W2898816805 cites W2091038722 @default.
• W2898816805 cites W2093792795 @default.
• W2898816805 cites W2094137047 @default.
• W2898816805 cites W2107053191 @default.
• W2898816805 cites W2110959060 @default.
• W2898816805 cites W2114251419 @default.
• W2898816805 cites W2138739197 @default.
• W2898816805 cites W2146359829 @default.
• W2898816805 cites W2148968943 @default.
• W2898816805 cites W2162615887 @default.
• W2898816805 cites W2165183650 @default.
• W2898816805 cites W2168163622 @default.
• W2898816805 cites W2191369290 @default.
• W2898816805 cites W2208104207 @default.
• W2898816805 cites W2216778899 @default.
• W2898816805 cites W2257992222 @default.
• W2898816805 cites W2269242894 @default.
• W2898816805 cites W2274687543 @default.
• W2898816805 cites W2307528158 @default.
• W2898816805 cites W2315505095 @default.
• W2898816805 cites W2316803351 @default.
• W2898816805 cites W2331213426 @default.
• W2898816805 cites W2336784319 @default.
• W2898816805 cites W2341563958 @default.
• W2898816805 cites W2345986086 @default.
• W2898816805 cites W2478697358 @default.
• W2898816805 cites W2516499776 @default.
• W2898816805 cites W2522076266 @default.
• W2898816805 cites W2580022629 @default.
• W2898816805 cites W2585714732 @default.
• W2898816805 cites W2586073148 @default.
• W2898816805 cites W2619149755 @default.
• W2898816805 cites W2741217798 @default.
• W2898816805 cites W2753941476 @default.
• W2898816805 cites W2758125535 @default.
• W2898816805 cites W2765282939 @default.
• W2898816805 cites W2793854322 @default.
• W2898816805 cites W2795056479 @default.
• W2898816805 cites W4233807510 @default.
• W2898816805 doi "https://doi.org/10.1021/acsaem.8b00849" @default.
• W2898816805 hasPublicationYear "2018" @default.
• W2898816805 type Work @default.
• W2898816805 sameAs 2898816805 @default.
• W2898816805 citedByCount "48" @default.
• W2898816805 countsByYear W28988168052019 @default.
• W2898816805 countsByYear W28988168052020 @default.
• W2898816805 countsByYear W28988168052021 @default.
• W2898816805 countsByYear W28988168052022 @default.
• W2898816805 countsByYear W28988168052023 @default.
• W2898816805 crossrefType "journal-article" @default.
• W2898816805 hasAuthorship W2898816805A5016283976 @default.
• W2898816805 hasAuthorship W2898816805A5061506931 @default.
• W2898816805 hasAuthorship W2898816805A5073925736 @default.
• W2898816805 hasAuthorship W2898816805A5079178929 @default.
• W2898816805 hasAuthorship W2898816805A5087006716 @default.
• W2898816805 hasAuthorship W2898816805A5089274995 @default.
• W2898816805 hasAuthorship W2898816805A5090497794 @default.
• W2898816805 hasBestOaLocation W28988168052 @default.
• W2898816805 hasConcept C127413603 @default.
• W2898816805 hasConcept C135473242 @default.
• W2898816805 hasConcept C147789679 @default.
• W2898816805 hasConcept C150394285 @default.
• W2898816805 hasConcept C159985019 @default.
• W2898816805 hasConcept C161790260 @default.
• W2898816805 hasConcept C171250308 @default.

• next