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- W2898835060 abstract "In this work, 4H-SiC Trench Gate (Recessed Channel) (4H-SiC-RC) MOSFET structure is demonstrated to have superior analog and RF Figure of Merits (FOMs) by numerical simulation. The integration of 4H-SiC with phosphorene contact on to the trench region results in higher drain current (2.3 mA) and outstanding switching ratio (1016) owing to reduced off-current which leads to the lower sub-threshold slope (SS). Other electrical parameters such as electric field, electron mobility, and electron velocity are remarkably improved in 4H-SiC-RC MOSFET. Further, the high-frequency RF FOMs have also been studied, and it is observed that cut-off frequency (fT) gets doubled and maximum oscillator frequency (fMAX) increased by five times in the proposed design as compared to conventional design. Thus, the 4H-SiC-RC design is suitable for high switching, high power, and high-frequency application." @default.
- W2898835060 created "2018-11-09" @default.
- W2898835060 creator A5038751035 @default.
- W2898835060 date "2019-01-01" @default.
- W2898835060 modified "2023-09-26" @default.
- W2898835060 title "Analog and RF assessment of sub-20 nm 4H-SiC trench gate MOSFET for high frequency applications" @default.
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- W2898835060 doi "https://doi.org/10.1016/j.aeue.2018.10.035" @default.
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