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- W2899128412 abstract "We report on the reduction of leakage current at half threshold bias (I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off1/2</sub> ) down to the 1nA range achieved using Se-enriched or N-doped GeSe. Integrated 50nm OTS devices demonstrated excellent thermal stability up to 600°C, as well as electrical stability (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> , I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off1/2</sub> ) when operated at a high on current density of 23MA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> for 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> cycles." @default.
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- W2899128412 date "2018-06-01" @default.
- W2899128412 modified "2023-10-05" @default.
- W2899128412 title "Half-threshold bias I<inf>off</inf> reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers" @default.
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- W2899128412 doi "https://doi.org/10.1109/vlsit.2018.8510680" @default.
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