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- W2899199145 abstract "Abstract We have successfully deposited novel single phase W-doped orthorhombic vanadium pentoxide nanostructured thin films by pulsed laser deposition technique. It is seen that there is a strong influence of deposition temperature on the structure, optical and electrical properties of W-doped V2O5 films. The morphology of the apparently amorphous films deposited at 423 K turns into films with homogeneous distribution of crystalline nanorods with 10–20 nm diameter at 523 K and 623 K. The growth mechanism leading to the transformation of a 2D film to a nanorod-like morphology is described. Direct optical band gap of the W-doped V2O5 films decreased from 2.61 eV (at 623 K) to 2.18 eV (at 423 K). Temperature dependent characteristics of the electrical conductivity (resistivity) in the temperature range 300 K–500 K were investigated, and the underlying mechanism in the increase in activation energy is well understood." @default.
- W2899199145 created "2018-11-09" @default.
- W2899199145 creator A5034996839 @default.
- W2899199145 date "2019-01-01" @default.
- W2899199145 modified "2023-09-27" @default.
- W2899199145 title "Effect of temperature on structural, optical and electrical properties of pulsed-laser deposited W-doped V2O5 thin films" @default.
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- W2899199145 doi "https://doi.org/10.1016/j.spmi.2018.10.029" @default.
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