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• W2899243119 endingPage "126501" @default.
• W2899243119 startingPage "126501" @default.
• W2899243119 abstract "We demonstrate a new process scheme for fabricating stretchable active matrices of oxide thin-film transistors (TFTs), where TFTs and cross points of two metal layers on stiff islands are monolithically integrated with gallium-based liquid metal interconnects within an elastomeric matrix. As the liquid metal interconnects are formed by a photolithography-based technique compatible with conventional flexible circuit technology, this approach can provide high integration density and mechanical durability as required in stretchable displays or electronic skins. We have fabricated a 4 × 4 active matrix of oxide TFTs within a 20 × 20 mm2 area, which provides stable operation up to 40% of stretching." @default.
• W2899243119 created "2018-11-09" @default.
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• W2899243119 date "2018-10-29" @default.
• W2899243119 modified "2023-10-13" @default.
• W2899243119 title "Stretchable active matrix of oxide thin-film transistors with monolithic liquid metal interconnects" @default.
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• W2899243119 doi "https://doi.org/10.7567/apex.11.126501" @default.
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