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- W2899435306 abstract "Thick (>150 nm) InxAl1-xN layers were grown on GaN/sapphire (0 0 0 1) by organometallic vapor phase epitaxy. Growth temperature of InxAl1-xN layers was reduced from 790 to 730 °C, to examine the effects of growth temperature in InxAl1-xN layers grown under H2 carrier gas. Indium incorporation, surface morphology, electrical, and optical properties of InxAl1-xN layers were examined as a function of growth temperature. Increase in In-molar fraction, as determined by high resolution X-ray diffraction, was observed with decreasing growth temperature of InxAl1-xN layers at the expense of surface roughness. Unstrained InxAl1-xN layer was achieved at 730 °C under H2 carrier gas with x = 0.18. However, InxAl1-xN layer grown under N2 carrier gas at 730 °C to study the effects of carrier gas, was observed with two times higher In-molar fraction (x = 0.37) and one order lower carrier concentration. This work shows the essential requirement of a multi-characterization approach to establish a connection between structural, electrical, and optical properties to improve our understanding towards InxAl1-xN. Edge threading dislocations density is found to be the most important parameter in deciding the characteristics of an InxAl1-xN layer." @default.
- W2899435306 created "2018-11-09" @default.
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- W2899435306 date "2019-03-01" @default.
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- W2899435306 title "Effect of temperature and carrier gas on the properties of thick <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML altimg=si2.gif overflow=scroll><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>I</mml:mi><mml:mi mathvariant=normal>n</mml:mi></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant=normal>A</mml:mi><mml:mi mathvariant=normal>l</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>-</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub…" @default.
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- W2899435306 doi "https://doi.org/10.1016/j.apsusc.2018.10.231" @default.
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