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- W2900357972 abstract "The quest for high-mobility nanomaterials with direct band gap is motivated by not only the scientific interest but also the practical need for fabricating the nanoelectronic and optoelectronic devices. Using high-throughput first-principles calculations, we have determined the ground-state structures of two-dimensional group-VA binary compounds and explored two stable β phases of BiAs with unexpected direct band gaps. The proposed BiAs monolayer has extremely high mobility of 8.38 × 104 cm2 V–1 s–1 close to that of graphene, and furthermore, BiAs is a promising donor material for solar cells. Significantly, our results definitely show that spin–orbit coupling plays a crucial role in exploring the electronic properties of the group-VA binary compounds, as well as studying other compounds with heavy atoms. Our findings pave the way for realizing the nanoelectronic and optoelectronic applications of two-dimensional group-VA binary compounds." @default.
- W2900357972 created "2018-11-16" @default.
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- W2900357972 date "2018-11-07" @default.
- W2900357972 modified "2023-10-15" @default.
- W2900357972 title "Extremely High Mobilities in Two-Dimensional Group-VA Binary Compounds with Large Conversion Efficiency for Solar Cells" @default.
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- W2900357972 doi "https://doi.org/10.1021/acs.jpcc.8b10652" @default.
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