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• W2900907655 abstract "Capacitance–voltage measurements along with the Mott–Schottky (MS) analysis are widely used for characterization of material and device parameters. Using a simple analytical model, supported by detailed numerical simulations, here, we predict that the capacitance of thin film devices scales as V–2 (V is the applied potential), instead of the often used V–0.5 dependence of MS analysis, with significant implications toward extraction of parameters like doping density and built-in voltage. Surprisingly, we find that the predicted trends are already hidden in multiple instances of the existing literature. As such, our results constitute a fundamental contribution to semiconductor device physics and are directly applicable and immediately relevant to a broad range of carrier-selective optoelectronic devices like organic solar cells, perovskite-based solar cells and light-emitting diodes, thin film a-Si devices, etc." @default.
• W2900907655 created "2018-11-29" @default.
• W2900907655 creator A5024989229 @default.
• W2900907655 creator A5085813842 @default.
• W2900907655 date "2018-11-15" @default.
• W2900907655 modified "2023-10-14" @default.
• W2900907655 title "Anomalous Scaling Exponents in the Capacitance–Voltage Characteristics of Perovskite Thin Film Devices" @default.
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• W2900907655 doi "https://doi.org/10.1021/acs.jpcc.8b09765" @default.
• W2900907655 hasPublicationYear "2018" @default.
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