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- W2901205763 abstract "e- and μ-near-zero (EMNZ) metamaterial has been demonstrated for unconventional tailoring and manipulation of the light-matter interaction. Therefore, it provides a platform for new optoelectronic devices having desirable properties and functionalities. In this paper, we studied several ITO films with different thickness and annealing process to explore the possibility to develop a host EMNZ metamaterial for a new type of optoelectronic devices that is environmental insensitive. We have characterized these ITO films with ellispsometry study, X-ray diffraction, TEM and SIMS, etc. The results indicated that a thicker self-assembled annealed ITO film has a no uniform permittivity (e) which varies from a negative to a positive value from the substrate to the top surface. In order to make the ITO metamaterial useful, we studied the method to produce a thicker than 1.5µm ITO with e-near-zero (ENZ) and slight negative condition. The goal is to develop an ENZ metamaterial process that is compatible for Si-based integrated optoelectronic platform." @default.
- W2901205763 created "2018-11-29" @default.
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- W2901205763 date "2018-09-01" @default.
- W2901205763 modified "2023-10-02" @default.
- W2901205763 title "Thick Epsilon-Near-Zero ITO Metamaterial Films" @default.
- W2901205763 doi "https://doi.org/10.1109/ipcon.2018.8527298" @default.
- W2901205763 hasPublicationYear "2018" @default.
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