FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2901258287> ?p ?o ?g. }

• W2901258287 endingPage "39046" @default.
• W2901258287 startingPage "39039" @default.
• W2901258287 abstract "We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF6. Our calculated results suggest that the overall reactions of the WF6 on the B-covered TiN surfaces are energetically much more favorable than the one on the TiN surfaces, which means that the high reactivity of WF6 with the B-covered TiN surface is attributed to the presence of B-covered surface made by B2H6 molecules. As a result, an effect of the B2H6 flow serves as a catalyst to decompose WF6 molecules. Two additional reaction processes right after WF6 bond dissociation, such as W substitution and BF3 desorption, were also explored to clearly understand the detailed reactions that can occur by WF6 flow. At the first additional reaction process, W atoms can be substituted into B site and covered on the TiN surfaces due to the stronger bonding nature of W with the TiN surface than B atoms. At the second additional reaction process, remaining atoms, such as B and F, can be easily desorbed as by-product, that is, BF3 because BF3 desorption is an energetically favorable reaction with a low activation energy. Furthermore, we also investigated the effect of H2 post-treatment on W-covered TiN surface in order to remove residual F adatoms, which are known to cause severe problems that extremely degrade the characteristics of memory devices. It was found that both H2 dissociative reaction and HF desorption can occur sufficiently well under somewhat high temperature and H2 ambience, which is confirmed by our DFT results and previously reported experimental results. These results imply that the understanding of the role of gas molecules used for W deposition gives us insight into improving the W ALD process for future memory devices." @default.
• W2901258287 created "2018-11-29" @default.
• W2901258287 creator A5034157254 @default.
• W2901258287 creator A5054493130 @default.
• W2901258287 creator A5064159991 @default.
• W2901258287 creator A5065126365 @default.
• W2901258287 creator A5077677513 @default.
• W2901258287 creator A5084806533 @default.
• W2901258287 creator A5091408659 @default.
• W2901258287 date "2018-01-01" @default.
• W2901258287 modified "2023-10-16" @default.
• W2901258287 title "Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study" @default.
• W2901258287 cites W1569609116 @default.
• W2901258287 cites W1711113574 @default.
• W2901258287 cites W1791172985 @default.
• W2901258287 cites W1964601879 @default.
• W2901258287 cites W1970127494 @default.
• W2901258287 cites W1976606328 @default.
• W2901258287 cites W1980504091 @default.
• W2901258287 cites W1981368803 @default.
• W2901258287 cites W2020995262 @default.
• W2901258287 cites W2031430816 @default.
• W2901258287 cites W2034859243 @default.
• W2901258287 cites W2044591029 @default.
• W2901258287 cites W2050757039 @default.
• W2901258287 cites W2063495172 @default.
• W2901258287 cites W2066960442 @default.
• W2901258287 cites W2083222334 @default.
• W2901258287 cites W2087474038 @default.
• W2901258287 cites W2087585288 @default.
• W2901258287 cites W2124470127 @default.
• W2901258287 cites W2158932701 @default.
• W2901258287 cites W2166658701 @default.
• W2901258287 cites W2171014769 @default.
• W2901258287 cites W2172064907 @default.
• W2901258287 cites W2204918453 @default.
• W2901258287 cites W2234666983 @default.
• W2901258287 cites W2315246605 @default.
• W2901258287 cites W2317093692 @default.
• W2901258287 cites W2506456812 @default.
• W2901258287 cites W2775200853 @default.
• W2901258287 doi "https://doi.org/10.1039/c8ra07354f" @default.
• W2901258287 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/35558318" @default.
• W2901258287 hasPublicationYear "2018" @default.
• W2901258287 type Work @default.
• W2901258287 sameAs 2901258287 @default.
• W2901258287 citedByCount "5" @default.
• W2901258287 countsByYear W29012582872020 @default.
• W2901258287 countsByYear W29012582872021 @default.
• W2901258287 countsByYear W29012582872022 @default.
• W2901258287 crossrefType "journal-article" @default.
• W2901258287 hasAuthorship W2901258287A5034157254 @default.
• W2901258287 hasAuthorship W2901258287A5054493130 @default.
• W2901258287 hasAuthorship W2901258287A5064159991 @default.
• W2901258287 hasAuthorship W2901258287A5065126365 @default.
• W2901258287 hasAuthorship W2901258287A5077677513 @default.
• W2901258287 hasAuthorship W2901258287A5084806533 @default.
• W2901258287 hasAuthorship W2901258287A5091408659 @default.
• W2901258287 hasBestOaLocation W29012582871 @default.
• W2901258287 hasConcept C102931765 @default.
• W2901258287 hasConcept C147597530 @default.
• W2901258287 hasConcept C147789679 @default.
• W2901258287 hasConcept C150394285 @default.
• W2901258287 hasConcept C161790260 @default.
• W2901258287 hasConcept C162711632 @default.
• W2901258287 hasConcept C178790620 @default.
• W2901258287 hasConcept C185592680 @default.
• W2901258287 hasConcept C2779227376 @default.
• W2901258287 hasConcept C32909587 @default.
• W2901258287 hasConcept C525849907 @default.
• W2901258287 hasConcept C65024703 @default.
• W2901258287 hasConcept C69544855 @default.
• W2901258287 hasConceptScore W2901258287C102931765 @default.
• W2901258287 hasConceptScore W2901258287C147597530 @default.
• W2901258287 hasConceptScore W2901258287C147789679 @default.
• W2901258287 hasConceptScore W2901258287C150394285 @default.
• W2901258287 hasConceptScore W2901258287C161790260 @default.
• W2901258287 hasConceptScore W2901258287C162711632 @default.
• W2901258287 hasConceptScore W2901258287C178790620 @default.
• W2901258287 hasConceptScore W2901258287C185592680 @default.
• W2901258287 hasConceptScore W2901258287C2779227376 @default.
• W2901258287 hasConceptScore W2901258287C32909587 @default.
• W2901258287 hasConceptScore W2901258287C525849907 @default.
• W2901258287 hasConceptScore W2901258287C65024703 @default.
• W2901258287 hasConceptScore W2901258287C69544855 @default.
• W2901258287 hasIssue "68" @default.
• W2901258287 hasLocation W29012582871 @default.
• W2901258287 hasLocation W29012582872 @default.
• W2901258287 hasLocation W29012582873 @default.
• W2901258287 hasOpenAccess W2901258287 @default.
• W2901258287 hasPrimaryLocation W29012582871 @default.
• W2901258287 hasRelatedWork W1972872147 @default.
• W2901258287 hasRelatedWork W2034385147 @default.
• W2901258287 hasRelatedWork W2050655542 @default.
• W2901258287 hasRelatedWork W2055848513 @default.
• W2901258287 hasRelatedWork W2094138711 @default.
• W2901258287 hasRelatedWork W2352741076 @default.
• W2901258287 hasRelatedWork W2353942315 @default.

• next