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- W2901498061 abstract "Sensing and imaging for ultraviolet (UV) and near infrared (NIR) bands has many applications for NASA, defense, and commercial systems. Recent work has involved developing UV avalanche photodiode (UV -APD) arrays with high gain for high resolution imaging. Various GaN/AlGaN p-i-n (PIN) UV -APDs have been fabricated from epitaxial structures grown by MOCVD on GaN substrates with avalanche gains higher than $5times 10^{5}$ , and significantly higher responsivities. Likewise, the SiGe material system allows the demonstration of high-performance detector array technology that covers the 0.5 to $1.7 mu mathrm{m}$ wavelength range for visible and NIR bands of interest. We have utilized SiGe fabrication technology to develop Ge based PIN detector devices on 300 mm Si wafers. We will discuss the theoretical and experimental results from electrical and optical characterization of the detector devices with various $n^{+}$ region doping concentrations to demonstrate low dark currents below $1 mu mathrm{A}$ at −1 V and high photocurrent. Recent results from these detector arrays for UV and NIR detection will be presented." @default.
- W2901498061 created "2018-11-29" @default.
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- W2901498061 date "2019-07-01" @default.
- W2901498061 modified "2023-09-24" @default.
- W2901498061 title "Development of High-Performance Detector Technology for UV and IR Applications" @default.
- W2901498061 cites W2006516886 @default.
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- W2901498061 doi "https://doi.org/10.1109/igarss.2019.8897813" @default.
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