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- W2901985989 abstract "Tunnel junctions with low differential resistance and high transparency have been grown by molecular beam epitaxy on GaSb substrates. The resulting devices have been characterized and analyzed using a combination of electrical measurements and modeling. These devices have importance to multi-junction solar cells grown on GaSb substrates. The structures contain an n-type InAs quantum well embedded in a GaSb p/n junction, exploiting the high tunnel probability at the broken gap interface between p-type GaSb and n-type InAs, whilst having a minimal impact on the transparency of the device." @default.
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- W2901985989 date "2017-06-01" @default.
- W2901985989 modified "2023-09-25" @default.
- W2901985989 title "Low-resistance and highly-transparent GaSb-based tunnel junctions" @default.
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- W2901985989 doi "https://doi.org/10.1109/pvsc.2017.8366431" @default.
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