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- W2902133046 abstract "Thin film crystalline silicon (c-Si) solar cells have been a potential candidate to reduce the capital expenditure associated with traditional silicon photovoltaic market. However the contact recombination becomes major concern preventing the thin-film cell performance reaching the theoretical efficiency. To reduce the effect of this problem, low-cost and silicon-compatible process is needed to suppress the contact recombination. In this work, thin film nickel oxide (NiO x ) is proposed as hole-selective interlayer for c-Si solar cells, which could potentially reduce the contact recombination between p-Si/metal interfaces. The thin film NiO x layer is integrated with $2 mu mathrm{m}$ thick ultra-thin c-Si solar cells bye-beam evaporation. Cell performance including open circuit voltage and efficiency are presented and discussed under different NiO x thickness and annealing condition. Experimental results showed 6mV Voc enhancement when Snm thick NiO x is inserted when annealing condition is optimized. However the interface quality becomes another concern due to the increased series resistance associated with the extra NiO x layer." @default.
- W2902133046 created "2018-12-11" @default.
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- W2902133046 date "2017-06-01" @default.
- W2902133046 modified "2023-09-26" @default.
- W2902133046 title "Ultra-Thin Crystalline Silicon Solar Cells with Nickel Oxide Interlayer as Hole-selective Contact" @default.
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- W2902133046 doi "https://doi.org/10.1109/pvsc.2017.8366348" @default.
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