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- W2902631490 abstract "Based on density functional theory calculations, the authors develop a general model for nucleation of III-V semiconductors on vicinal nonpolar (111)-oriented substrates. This model predicts, in particular, that the atomic structure of the step edges at the substrate surface is decisive for the formation and suppression of detrimental rotational twin defects. These predictions are in full agreement with the experimental analysis done on a series of samples with the technologically important material combination of GaP grown on As-modified Si(111). The authors thus derive a complete picture of the formation and suppression of rotational twins relevant for low-defect III-V-on-Si integration." @default.
- W2902631490 created "2018-12-11" @default.
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- W2902631490 date "2018-12-03" @default.
- W2902631490 modified "2023-09-30" @default.
- W2902631490 title "Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)" @default.
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- W2902631490 doi "https://doi.org/10.1103/physrevmaterials.2.124601" @default.
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