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- W2903407002 abstract "Two series of a-Si:H solar cells with varying absorber thickness (t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>i</sub> =10-500 nm) and deposition temperature (T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dep-i</sub> =200-350°C) were investigated by Fourier-transform photocurrent spectroscopy to determine the sub-bandgap absorption originating from the electronic localized states in the a-Si:H absorber i-layer. The thickness series showed that the bulk defect is increased by thickening ti and by light soaking while no p-i or n-i interface defect prevails. It is demonstrated that the performance of the state-of-the-art a-Si:H p-i-n solar cell is dominated by the total number of (native and light-induced) midgap defects in the bulk i-layer. On the other hand, variation of T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dep-i</sub> has a different impact on the creation of localized states in the i-layer depending on the layer stack sequence (p-i-n or n-ip). When depositing a-Si:H i-layer at high temperatures (>200°C), p-i-n cells showed a larger performance decrease than n-i-p cells, along with a broader bandtails and a larger number of defects in the i-layer. The results indicate that the creation of such electronic states is influenced by the local Fermi level position in the i-layer, i.e., the closer the Fermi level to the valence band (p-i interface), the more electronic states are created at high T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dep-i</sub> . These findings agree with the earlier report that p-doped a-Si:H and c-Si passivated by a p-i stack of a-Si:H layers exhibit a lower thermal stability." @default.
- W2903407002 created "2018-12-11" @default.
- W2903407002 creator A5052961383 @default.
- W2903407002 creator A5057571263 @default.
- W2903407002 creator A5070325690 @default.
- W2903407002 creator A5083812122 @default.
- W2903407002 date "2017-06-01" @default.
- W2903407002 modified "2023-09-24" @default.
- W2903407002 title "Investigation of Interface and Bulk Localized States in a-Si:H Solar Cells" @default.
- W2903407002 cites W1530575009 @default.
- W2903407002 cites W1966346571 @default.
- W2903407002 cites W1975476190 @default.
- W2903407002 cites W2008561304 @default.
- W2903407002 cites W2046630897 @default.
- W2903407002 cites W2054023292 @default.
- W2903407002 cites W2085048745 @default.
- W2903407002 cites W2172909220 @default.
- W2903407002 cites W2213796421 @default.
- W2903407002 cites W2547262144 @default.
- W2903407002 cites W621694888 @default.
- W2903407002 doi "https://doi.org/10.1109/pvsc.2017.8366532" @default.
- W2903407002 hasPublicationYear "2017" @default.
- W2903407002 type Work @default.
- W2903407002 sameAs 2903407002 @default.
- W2903407002 citedByCount "0" @default.
- W2903407002 crossrefType "proceedings-article" @default.
- W2903407002 hasAuthorship W2903407002A5052961383 @default.
- W2903407002 hasAuthorship W2903407002A5057571263 @default.
- W2903407002 hasAuthorship W2903407002A5070325690 @default.
- W2903407002 hasAuthorship W2903407002A5083812122 @default.
- W2903407002 hasConcept C113196181 @default.
- W2903407002 hasConcept C121332964 @default.
- W2903407002 hasConcept C171250308 @default.
- W2903407002 hasConcept C178790620 @default.
- W2903407002 hasConcept C181966813 @default.
- W2903407002 hasConcept C185592680 @default.
- W2903407002 hasConcept C192562407 @default.
- W2903407002 hasConcept C199360897 @default.
- W2903407002 hasConcept C2779227376 @default.
- W2903407002 hasConcept C2779845233 @default.
- W2903407002 hasConcept C32891209 @default.
- W2903407002 hasConcept C41008148 @default.
- W2903407002 hasConcept C49040817 @default.
- W2903407002 hasConcept C62520636 @default.
- W2903407002 hasConcept C8010536 @default.
- W2903407002 hasConcept C9395851 @default.
- W2903407002 hasConceptScore W2903407002C113196181 @default.
- W2903407002 hasConceptScore W2903407002C121332964 @default.
- W2903407002 hasConceptScore W2903407002C171250308 @default.
- W2903407002 hasConceptScore W2903407002C178790620 @default.
- W2903407002 hasConceptScore W2903407002C181966813 @default.
- W2903407002 hasConceptScore W2903407002C185592680 @default.
- W2903407002 hasConceptScore W2903407002C192562407 @default.
- W2903407002 hasConceptScore W2903407002C199360897 @default.
- W2903407002 hasConceptScore W2903407002C2779227376 @default.
- W2903407002 hasConceptScore W2903407002C2779845233 @default.
- W2903407002 hasConceptScore W2903407002C32891209 @default.
- W2903407002 hasConceptScore W2903407002C41008148 @default.
- W2903407002 hasConceptScore W2903407002C49040817 @default.
- W2903407002 hasConceptScore W2903407002C62520636 @default.
- W2903407002 hasConceptScore W2903407002C8010536 @default.
- W2903407002 hasConceptScore W2903407002C9395851 @default.
- W2903407002 hasLocation W29034070021 @default.
- W2903407002 hasOpenAccess W2903407002 @default.
- W2903407002 hasPrimaryLocation W29034070021 @default.
- W2903407002 hasRelatedWork W1972216760 @default.
- W2903407002 hasRelatedWork W2046768330 @default.
- W2903407002 hasRelatedWork W2324577260 @default.
- W2903407002 hasRelatedWork W2382601015 @default.
- W2903407002 hasRelatedWork W2497922937 @default.
- W2903407002 hasRelatedWork W2789619847 @default.
- W2903407002 hasRelatedWork W2899084033 @default.
- W2903407002 hasRelatedWork W2961581639 @default.
- W2903407002 hasRelatedWork W4205206550 @default.
- W2903407002 hasRelatedWork W4225072583 @default.
- W2903407002 isParatext "false" @default.
- W2903407002 isRetracted "false" @default.
- W2903407002 magId "2903407002" @default.
- W2903407002 workType "article" @default.