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• W2903442021 abstract "InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown Al2O3/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis. The chemical environment and core-level shifts are clarified for well-embedded InAs interfaces (12 nm Al2O3) to avoid, in particular, effects of a significant potential change at the vacuum-solid interface. High-resolution As 3d spectra reveal that the Al2O3/InAs interface, which was sputter-cleaned before ALD, includes +1.0 eV shift, whereas As 3d of the preoxidized (3 × 1)-O interface exhibits a shift of -0.51 eV. The measurements also indicate that an As2O3 type structure is not crucial in controlling defect densities. Regarding In 4d measurements, the sputtered InAs interface includes only a +0.29 eV shift, while the In 4d shift around -0.3 eV is found to be inherent for the crystalline oxidized interfaces. Thus, the negative shifts, which have been usually associated with dangling bonds, are not necessarily an indication of such point defects as previously expected. In contrast, the negative shifts can arise from bonding with O atoms. Therefore, specific care should be directed in determining the bulk-component positions in photoelectron studies. Finally, we present an approach to transfer the InAs oxidation results to a device process of high electron mobility transistors (HEMT) using an As-rich III-V surface and In deposition. The approach is found to decrease a gate leakage current of HEMT without losing the gate controllability." @default.
• W2903442021 created "2018-12-11" @default.
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• W2903442021 date "2018-12-03" @default.
• W2903442021 modified "2023-09-28" @default.
• W2903442021 title "Oxidation-Induced Changes in the ALD-Al₂O₃/InAs(100) Interface and Control of the Changes for Device Processing" @default.
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• W2903442021 cites W1663235070 @default.
• W2903442021 cites W1831061232 @default.
• W2903442021 cites W1965360299 @default.
• W2903442021 cites W1971982367 @default.
• W2903442021 cites W1981341546 @default.
• W2903442021 cites W1984772856 @default.
• W2903442021 cites W1993864109 @default.
• W2903442021 cites W1997186656 @default.
• W2903442021 cites W2000422813 @default.
• W2903442021 cites W2002674242 @default.
• W2903442021 cites W2003044243 @default.
• W2903442021 cites W2014255260 @default.
• W2903442021 cites W2018522795 @default.
• W2903442021 cites W2019980090 @default.
• W2903442021 cites W2022790925 @default.
• W2903442021 cites W2023353733 @default.
• W2903442021 cites W2024861462 @default.
• W2903442021 cites W2026882619 @default.
• W2903442021 cites W2027742156 @default.
• W2903442021 cites W2031460652 @default.
• W2903442021 cites W2033488745 @default.
• W2903442021 cites W2033520061 @default.
• W2903442021 cites W2035424787 @default.
• W2903442021 cites W2036483166 @default.
• W2903442021 cites W2038304637 @default.
• W2903442021 cites W2042612536 @default.
• W2903442021 cites W2045075419 @default.
• W2903442021 cites W2050650663 @default.
• W2903442021 cites W2060024157 @default.
• W2903442021 cites W2060762350 @default.
• W2903442021 cites W2066303531 @default.
• W2903442021 cites W2067961160 @default.
• W2903442021 cites W2070441219 @default.
• W2903442021 cites W2073725164 @default.
• W2903442021 cites W2074646762 @default.
• W2903442021 cites W2079338747 @default.
• W2903442021 cites W2082742199 @default.
• W2903442021 cites W2088582318 @default.
• W2903442021 cites W2089670229 @default.
• W2903442021 cites W2091856529 @default.
• W2903442021 cites W2092748374 @default.
• W2903442021 cites W2095598920 @default.
• W2903442021 cites W2109419143 @default.
• W2903442021 cites W2113499088 @default.
• W2903442021 cites W2153219061 @default.
• W2903442021 cites W2157407731 @default.
• W2903442021 cites W2197376638 @default.
• W2903442021 cites W2300344163 @default.
• W2903442021 cites W2314474494 @default.
• W2903442021 cites W2317532707 @default.
• W2903442021 cites W2322603028 @default.
• W2903442021 cites W2325071578 @default.
• W2903442021 cites W2331423971 @default.
• W2903442021 cites W2476865799 @default.
• W2903442021 cites W2487024511 @default.
• W2903442021 cites W2517743591 @default.
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• W2903442021 doi "https://doi.org/10.1021/acsami.8b17843" @default.
• W2903442021 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30508372" @default.
• W2903442021 hasPublicationYear "2018" @default.
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