Matches in SemOpenAlex for { <https://semopenalex.org/work/W2903568400> ?p ?o ?g. }
Showing items 1 to 92 of
92
with 100 items per page.
- W2903568400 endingPage "000354" @default.
- W2903568400 startingPage "000349" @default.
- W2903568400 abstract "Abstract Moore's Law has been through many challenges in the last few years. The transistors continued to shrink to smaller sizes but the benefit of better performance and lower cost that comes along with shrinking is facing difficulties. Semiconductor industries are trying to come up with new ways to keep the Moore's Law going on two different fronts: where foundries are working on more Moore solutions and packaging houses are working on more than Moore solutions. Recently the industry has been considering the chip splitting and re-constitution in the form of SiP which has relatively shorter development time and lower cost than the SoC. But traditional SiP with wirebonding or FC connections to substrate will lead to high transmission loss and power consumption. A new fine line SiP solution is required to shorten the connection between chips to improve the performance. Different from the 3DIC and 2.5DIC technologies, fine line panel level fan out has the advantages of good performance, design flexibility, and high production efficiency. This paper will discuss about the challenges in setting up this technology including establishing standards, tools preparation, and process difficulties. The dedicated machines that handle the fine line panel level fan out are critical. It is not easy to select suitable tools for this new technology. We also need to co-develop with tool vendors for some process stages which suitable tools from existing industries could not be easily found. Additionally, panel warpage and chip shift are two of major process challenges. Experiences on overcoming these difficulties will be shared. Different structures and processes have been developed for varied application requirements. The chip first approach encapsulates chips and then build RDL layers on the encapsulation surface. It is suitable for mobile AP, baseband, ASIC, PMIC, and memory. The chip last solution build RDL first, then flip chip mounting the bumped chips on the RDL. The RDL can be tested before the mounting of chips. It is suitable for CPU, GPU, FPGA, and thermal sensitive devices. Pillars in fan out is a chip middle solution. It uses Cu pillars to connect top and bottom RDLs which is good for chip stacking. Currently the 5/5um line/space is already been qualified. 3/3um under development and tool capability is 2/2um. Several real cases will be demonstrated in this paper to help the readers understand this technology. This technology is expected to be crucial for the coming era of 5G, automotive, IoT, and AI. It is believed that this technology can be applied to different kinds of end applications. For example, multi-chip stacking in a fan out package to achieve high bandwidth performance. Fan out stacking of logic and memory chips which can replace the existing PoP. Using fan out to integrate passives and/or other chips can achieve a compact SiP. Fan out could be one of the embedded substrate. Fan out RDL process can also be a suitable platform for antenna in package designs. This paper will introduce the challenges of Moore's law as beginning, and then explain the advantages and the challenges of fine line panel fan out technology, and the proposed approaches to address those challenges." @default.
- W2903568400 created "2018-12-22" @default.
- W2903568400 creator A5006002801 @default.
- W2903568400 creator A5006270033 @default.
- W2903568400 creator A5023425397 @default.
- W2903568400 creator A5034462239 @default.
- W2903568400 creator A5057259596 @default.
- W2903568400 creator A5083639606 @default.
- W2903568400 creator A5090571982 @default.
- W2903568400 date "2018-10-01" @default.
- W2903568400 modified "2023-10-14" @default.
- W2903568400 title "Fine line panel level fan out changes the SiP landscape" @default.
- W2903568400 cites W2060510412 @default.
- W2903568400 cites W2515277349 @default.
- W2903568400 cites W2623505140 @default.
- W2903568400 cites W2626800663 @default.
- W2903568400 cites W2754405531 @default.
- W2903568400 cites W4239652645 @default.
- W2903568400 doi "https://doi.org/10.4071/2380-4505-2018.1.000349" @default.
- W2903568400 hasPublicationYear "2018" @default.
- W2903568400 type Work @default.
- W2903568400 sameAs 2903568400 @default.
- W2903568400 citedByCount "0" @default.
- W2903568400 crossrefType "journal-article" @default.
- W2903568400 hasAuthorship W2903568400A5006002801 @default.
- W2903568400 hasAuthorship W2903568400A5006270033 @default.
- W2903568400 hasAuthorship W2903568400A5023425397 @default.
- W2903568400 hasAuthorship W2903568400A5034462239 @default.
- W2903568400 hasAuthorship W2903568400A5057259596 @default.
- W2903568400 hasAuthorship W2903568400A5083639606 @default.
- W2903568400 hasAuthorship W2903568400A5090571982 @default.
- W2903568400 hasConcept C105795698 @default.
- W2903568400 hasConcept C111106434 @default.
- W2903568400 hasConcept C111919701 @default.
- W2903568400 hasConcept C112698675 @default.
- W2903568400 hasConcept C117671659 @default.
- W2903568400 hasConcept C119599485 @default.
- W2903568400 hasConcept C127413603 @default.
- W2903568400 hasConcept C144133560 @default.
- W2903568400 hasConcept C165005293 @default.
- W2903568400 hasConcept C198352243 @default.
- W2903568400 hasConcept C206891323 @default.
- W2903568400 hasConcept C2524010 @default.
- W2903568400 hasConcept C2780598303 @default.
- W2903568400 hasConcept C2781433648 @default.
- W2903568400 hasConcept C33923547 @default.
- W2903568400 hasConcept C41008148 @default.
- W2903568400 hasConcept C68812741 @default.
- W2903568400 hasConcept C76155785 @default.
- W2903568400 hasConcept C78519656 @default.
- W2903568400 hasConcept C98045186 @default.
- W2903568400 hasConceptScore W2903568400C105795698 @default.
- W2903568400 hasConceptScore W2903568400C111106434 @default.
- W2903568400 hasConceptScore W2903568400C111919701 @default.
- W2903568400 hasConceptScore W2903568400C112698675 @default.
- W2903568400 hasConceptScore W2903568400C117671659 @default.
- W2903568400 hasConceptScore W2903568400C119599485 @default.
- W2903568400 hasConceptScore W2903568400C127413603 @default.
- W2903568400 hasConceptScore W2903568400C144133560 @default.
- W2903568400 hasConceptScore W2903568400C165005293 @default.
- W2903568400 hasConceptScore W2903568400C198352243 @default.
- W2903568400 hasConceptScore W2903568400C206891323 @default.
- W2903568400 hasConceptScore W2903568400C2524010 @default.
- W2903568400 hasConceptScore W2903568400C2780598303 @default.
- W2903568400 hasConceptScore W2903568400C2781433648 @default.
- W2903568400 hasConceptScore W2903568400C33923547 @default.
- W2903568400 hasConceptScore W2903568400C41008148 @default.
- W2903568400 hasConceptScore W2903568400C68812741 @default.
- W2903568400 hasConceptScore W2903568400C76155785 @default.
- W2903568400 hasConceptScore W2903568400C78519656 @default.
- W2903568400 hasConceptScore W2903568400C98045186 @default.
- W2903568400 hasIssue "1" @default.
- W2903568400 hasLocation W29035684001 @default.
- W2903568400 hasOpenAccess W2903568400 @default.
- W2903568400 hasPrimaryLocation W29035684001 @default.
- W2903568400 hasRelatedWork W1830296376 @default.
- W2903568400 hasRelatedWork W1990223824 @default.
- W2903568400 hasRelatedWork W2348200275 @default.
- W2903568400 hasRelatedWork W2370433204 @default.
- W2903568400 hasRelatedWork W2377784891 @default.
- W2903568400 hasRelatedWork W2379743895 @default.
- W2903568400 hasRelatedWork W2381949746 @default.
- W2903568400 hasRelatedWork W2391763259 @default.
- W2903568400 hasRelatedWork W2795658439 @default.
- W2903568400 hasRelatedWork W2808415125 @default.
- W2903568400 hasVolume "2018" @default.
- W2903568400 isParatext "false" @default.
- W2903568400 isRetracted "false" @default.
- W2903568400 magId "2903568400" @default.
- W2903568400 workType "article" @default.