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• W2904102508 abstract "Bias temperature instability (BTI) is more problematic in SiC power MOSFETs due to the occurrence of higher interface state traps and fixed oxide traps compared to traditional silicon MOS interfaces where there are no carbon atoms degrading the atomically smooth Si/SiO 2 interface. The use of temperature sensitive electrical parameters (TSEPs) for measuring the junction temperature and enabling health monitoring based on junction temperature identification is a promising technique for increasing the reliability of power devices, however in the light of increased BTI in SiC devices, this must be carefully assessed. This paper evaluates how BTI of SiC power MOSFETs under high temperature gate bias stresses affects the electrical parameters used as TSEPs and its impact on condition monitoring." @default.
• W2904102508 created "2018-12-22" @default.
• W2904102508 creator A5030984031 @default.
• W2904102508 creator A5046587401 @default.
• W2904102508 date "2018-09-01" @default.
• W2904102508 modified "2023-09-27" @default.
• W2904102508 title "Impact of the Gate Oxide Reliability of SiC MOSFETs on the Junction Temperature Estimation Using Temperature Sensitive Electrical Parameters" @default.
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• W2904102508 doi "https://doi.org/10.1109/ecce.2018.8557810" @default.
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