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• W2904104332 endingPage "1056" @default.
• W2904104332 startingPage "1050" @default.
• W2904104332 abstract "Low-frequency noise is used to estimate the quality of the gate stack for planar Ge nMOSFETs with different effective work function metals and cap layers. It is shown that replacing TiN by a TiAl-based metal gate will induce a significant decline of the threshold voltage VT and noise power spectral density, indicating the introduction of Al will induce an advantageous effect on the trap density in the underlying HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . Meanwhile, the application of a LaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> cap tends to reduce V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> and the trap density in the gate oxide, which could attribute to the La in-diffusion in the gate stack. The 1/f noise analysis shows that the noise could mainly be associated with number fluctuations and correlated mobility fluctuations." @default.
• W2904104332 created "2018-12-22" @default.
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• W2904104332 date "2019-02-01" @default.
• W2904104332 modified "2023-10-01" @default.
• W2904104332 title "Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior" @default.
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• W2904104332 doi "https://doi.org/10.1109/ted.2018.2883529" @default.
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