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• W2904181138 abstract "In this work, crack-free 3.3-μm-thick AlN films with high crystalline quality and atomic smooth surfaces were achieved on sapphire substrates at a high growth rate of 2.9 μm/h. Double-axis x-ray rocking curves showed a full width at half maximum of 315 and 419 arc sec for (0002) and (101¯2) reflections, respectively, corresponding to a total threading dislocation (TD) density of 9.79 × 108 cm−2. Cracks were suppressed and crystalline quality was improved by introducing a medium-temperature (MT) layer. It was found that the density of both screw- and edge-type TDs could be significantly reduced by introducing the MT-AlN layer under appropriate temperature. The crystalline improvement is attributed to the delayed coalescence of the AlN islands and higher probability for the annihilations of TDs by the MT-AlN layer under appropriate temperature. This method provides a promising way in growing practical thick AlN templates suitable for large-scale industrial production." @default.
• W2904181138 created "2018-12-22" @default.
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• W2904181138 date "2019-01-01" @default.
• W2904181138 modified "2023-10-01" @default.
• W2904181138 title "Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer" @default.
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• W2904181138 doi "https://doi.org/10.1016/j.spmi.2018.12.008" @default.
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