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- W2904218744 abstract "We synthesized by atomic layer deposition (ALD) TiO2–IrOx alloys that enable high photovoltages and catalyze water oxidation on silicon metal–insulator–semiconductor (MIS) photoanodes. The ratio of TiO2 to IrOx was precisely controlled by varying the number of ALD cycles for each precursor. Silicon with a 2 nm surface SiO2 layer was coated with TiO2–IrOx alloys ranging in composition from 18 to 35% iridium relative to the sum of titanium and iridium concentrations. IrOx catalyzed oxygen evolution and imparted a high work function to the TiO2–IrOx alloys, enabling photovoltages during water oxidation that exceeded 600 mV. TiO2 imparted stability and inhibited corrosion of the underlying silicon light absorber. After annealing in forming gas (5% H2/95% N2), TiO2–IrOx alloys were stable for 12 h of continuous water oxidation in 1 M H2SO4. Key properties of the MIS junction affecting electrochemical operation were also extracted by electrochemical impedance spectroscopy. This work demonstrates that alloying by ALD is a promising approach for designing corrosion resistant Schottky contacts with optimized electronic and materials properties for catalyzed, solar driven water oxidation." @default.
- W2904218744 created "2018-12-22" @default.
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- W2904218744 date "2018-12-10" @default.
- W2904218744 modified "2023-10-06" @default.
- W2904218744 title "Atomic Layer Deposited TiO<sub>2</sub>–IrO<sub><i>x</i></sub> Alloys Enable Corrosion Resistant Water Oxidation on Silicon at High Photovoltage" @default.
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- W2904218744 doi "https://doi.org/10.1021/acs.chemmater.8b03092" @default.
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