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- W2904247140 abstract "A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm -3 and depth 1μm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm -3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs." @default.
- W2904247140 created "2018-12-22" @default.
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- W2904247140 date "2019-07-01" @default.
- W2904247140 modified "2023-09-24" @default.
- W2904247140 title "Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well" @default.
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- W2904247140 doi "https://doi.org/10.4028/www.scientific.net/msf.963.639" @default.
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