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• W2904257419 abstract "The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results." @default.
• W2904257419 created "2018-12-22" @default.
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• W2904257419 date "2018-09-01" @default.
• W2904257419 modified "2023-09-27" @default.
• W2904257419 title "Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes" @default.
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• W2904257419 doi "https://doi.org/10.1109/ecce.2018.8557415" @default.
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