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• W2904281627 abstract "We demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector that consists of layered quantum well structure grown by plasma-assisted molecular beam epitaxy on a 4-in Si (111) substrate. The design, simulations, growth process, optical measurements and device performance are presented and discussed. The photosignal, centered at a wavelength of 4.4 μm, is resolved up to 150 K. The zero bias responsivity is 44 μA/W at 19 K and the detectivity is 2 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> Jones." @default.
• W2904281627 created "2018-12-22" @default.
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• W2904281627 date "2019-02-01" @default.
• W2904281627 modified "2023-09-26" @default.
• W2904281627 title "Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon" @default.
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• W2904281627 doi "https://doi.org/10.1109/led.2018.2885611" @default.
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