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• W2904652380 abstract "The total dose effect and its dependence on the thickness of Al 2 O 3 gate dielectrics prepared by the atomic layer deposition (ALD) process have been investigated with various gamma-ray irradiation doses, based on the MOS structure of Al/Al 2 O 3 /Si and corresponding high frequency capacitance-voltage (C-V) characterization. The results show that there is a close relationship between the radiation hardness and thickness of the Al 2 O 3 dielectrics, and a thinner Al 2 O 3 dielectric is more sensitive to total dose irradiation than thicker ones." @default.
• W2904652380 created "2018-12-22" @default.
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• W2904652380 date "2018-10-01" @default.
• W2904652380 modified "2023-09-25" @default.
• W2904652380 title "Investigation of the relationship between the total dose effect and thickness of Al<inf>2</inf>O<inf>3</inf> gate dielectric under gamma-ray irradiation" @default.
• W2904652380 doi "https://doi.org/10.1109/icsict.2018.8565744" @default.
• W2904652380 hasPublicationYear "2018" @default.
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