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• W2904865399 endingPage "307" @default.
• W2904865399 startingPage "299" @default.
• W2904865399 abstract "Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. While WS2 and WSe2 are known for their excellent valley polarization due to the strong spin-orbit coupling, the optical bandgap is limited by the ability to choose from only these two materials. This limitation can be overcome through the monolayer alloy semiconductor, WS2xSe2(1-x), which promises an atomically thin semiconductor with tunable bandgap. In this work, we show that the high-quality BN encapsulated monolayer WS0.6Se1.4 inherits the superior optical properties of tungsten-based TMDs, including a trion splitting of ~ 6 meV and valley polarization as high as ~60%. In particular, we demonstrate for the first time the emerging and gate-tunable interlayer electron-phonon coupling in the BN/WS0.6Se1.4/BN van der Waals heterostructure, which renders the otherwise optically silent Raman modes visible. In addition, the emerging Raman signals can be drastically enhanced by the resonant coupling to the 2s state of the monolayer WS0.6Se1.4 A exciton. The BN/WS2xSe2(1-x)/BN van der Waals heterostructure with a tunable bandgap thus provides an exciting platform for exploring the valley degree of freedom and emerging excitonic physics in two-dimension." @default.
• W2904865399 created "2018-12-22" @default.
• W2904865399 creator A5002959977 @default.
• W2904865399 creator A5017709527 @default.
• W2904865399 creator A5028040279 @default.
• W2904865399 creator A5030924893 @default.
• W2904865399 creator A5041573207 @default.
• W2904865399 creator A5041743999 @default.
• W2904865399 creator A5045096283 @default.
• W2904865399 creator A5055072817 @default.
• W2904865399 creator A5056533734 @default.
• W2904865399 creator A5064524784 @default.
• W2904865399 creator A5064831934 @default.
• W2904865399 creator A5073449296 @default.
• W2904865399 creator A5075116203 @default.
• W2904865399 creator A5080751639 @default.
• W2904865399 date "2018-12-17" @default.
• W2904865399 modified "2023-10-03" @default.
• W2904865399 title "Excitonic Complexes and Emerging Interlayer Electron–Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS_0.6Se_1.4" @default.
• W2904865399 cites W1489642512 @default.
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• W2904865399 cites W1956948097 @default.
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• W2904865399 cites W2057933356 @default.
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• W2904865399 cites W2533215342 @default.
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• W2904865399 cites W2748351075 @default.
• W2904865399 cites W2751355924 @default.
• W2904865399 cites W2771026848 @default.
• W2904865399 cites W2771591898 @default.
• W2904865399 cites W2772911570 @default.
• W2904865399 cites W2786976754 @default.
• W2904865399 cites W2799036837 @default.
• W2904865399 cites W2810476007 @default.
• W2904865399 cites W3102276311 @default.
• W2904865399 cites W3124612682 @default.
• W2904865399 cites W3126128924 @default.
• W2904865399 doi "https://doi.org/10.1021/acs.nanolett.8b03918" @default.
• W2904865399 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30556398" @default.
• W2904865399 hasPublicationYear "2018" @default.
• W2904865399 type Work @default.
• W2904865399 sameAs 2904865399 @default.
• W2904865399 citedByCount "19" @default.
• W2904865399 countsByYear W29048653992019 @default.
• W2904865399 countsByYear W29048653992020 @default.
• W2904865399 countsByYear W29048653992021 @default.
• W2904865399 countsByYear W29048653992022 @default.
• W2904865399 countsByYear W29048653992023 @default.
• W2904865399 crossrefType "journal-article" @default.
• W2904865399 hasAuthorship W2904865399A5002959977 @default.
• W2904865399 hasAuthorship W2904865399A5017709527 @default.
• W2904865399 hasAuthorship W2904865399A5028040279 @default.
• W2904865399 hasAuthorship W2904865399A5030924893 @default.

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