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• W2905400806 abstract "A systematic analysis of the bias-stress effects in solution-processed organic field-effect transistors is reported. Difluoro 5,11-bis(triethylsilylethynyl) anthradithiophene, a high-performance molecular semiconductor, forms a charge-transport channel and is coupled with injection contacts made of Au, Ag, or Cu. The electrode metal is found to not only greatly affect the switching performances but also drive the response of transistors to the extended applications of gate voltage. The observations are put into the framework of contact-limited transistor model, which holistically assesses the material, geometry, and stress-related contributions." @default.
• W2905400806 created "2018-12-22" @default.
• W2905400806 creator A5084900880 @default.
• W2905400806 date "2019-03-01" @default.
• W2905400806 modified "2023-10-14" @default.
• W2905400806 title "Bias-stress effects in diF-TES-ADT field-effect transistors" @default.
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• W2905400806 doi "https://doi.org/10.1016/j.sse.2018.12.014" @default.
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