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• W2905682772 endingPage "298" @default.
• W2905682772 startingPage "295" @default.
• W2905682772 abstract "In this letter, we report optimized transport properties in gate recessed enhancement-mode GaN MOS-HEMTs by incorporating silicon into atomic layer deposited gate dielectric HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . Compared with commonly used HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate dielectric, the interface trap density can be reduced by nearly an order of magnitude and the fixed oxide traps inside are reduced to almost half using the high-quality passivation of HfSiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> . The MOS-HEMTs based on HfSiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> exhibit a threshold voltage of 1.5 V, excellent subthreshold swing of 65 mV/dec, and a high on-off ratio of 3 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>10</sup> . The incorporation of silicon in HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> can also increase the dielectric breakdown property with maximum gate electric field of 2.85 MV/cm for a 10-year time-dependent gate dielectric breakdown lifetime, which is 36% higher than pure HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . The maximum breakdown voltage of HfSiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> MOS-HEMT is 742 V, which is 30% higher than HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> MOS-HEMT." @default.
• W2905682772 created "2019-01-01" @default.
• W2905682772 creator A5006822602 @default.
• W2905682772 creator A5021941803 @default.
• W2905682772 creator A5046705365 @default.
• W2905682772 creator A5054018432 @default.
• W2905682772 creator A5067538622 @default.
• W2905682772 creator A5086010002 @default.
• W2905682772 date "2019-02-01" @default.
• W2905682772 modified "2023-10-03" @default.
• W2905682772 title "Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO<inline-formula> <tex-math notation=LaTeX>$_{{x}}$ </tex-math> </inline-formula> as Gate Dielectric" @default.
• W2905682772 cites W1969406007 @default.
• W2905682772 cites W1980193957 @default.
• W2905682772 cites W2000095744 @default.
• W2905682772 cites W2047708973 @default.
• W2905682772 cites W2050722959 @default.
• W2905682772 cites W2061497917 @default.
• W2905682772 cites W2064546203 @default.
• W2905682772 cites W2080254265 @default.
• W2905682772 cites W2086103622 @default.
• W2905682772 cites W2099530035 @default.
• W2905682772 cites W2100830444 @default.
• W2905682772 cites W2159766222 @default.
• W2905682772 cites W2172238407 @default.
• W2905682772 cites W2266973065 @default.
• W2905682772 cites W2276814997 @default.
• W2905682772 cites W2292296501 @default.
• W2905682772 cites W2545188574 @default.
• W2905682772 cites W2558725767 @default.
• W2905682772 cites W2568593453 @default.
• W2905682772 cites W2586473227 @default.
• W2905682772 cites W2599191216 @default.
• W2905682772 cites W2615972614 @default.
• W2905682772 cites W2619112201 @default.
• W2905682772 cites W2732077663 @default.
• W2905682772 cites W2732142998 @default.
• W2905682772 cites W2741871625 @default.
• W2905682772 doi "https://doi.org/10.1109/led.2018.2888486" @default.
• W2905682772 hasPublicationYear "2019" @default.
• W2905682772 type Work @default.
• W2905682772 sameAs 2905682772 @default.
• W2905682772 citedByCount "19" @default.
• W2905682772 countsByYear W29056827722019 @default.
• W2905682772 countsByYear W29056827722020 @default.
• W2905682772 countsByYear W29056827722021 @default.
• W2905682772 countsByYear W29056827722022 @default.
• W2905682772 countsByYear W29056827722023 @default.
• W2905682772 crossrefType "journal-article" @default.
• W2905682772 hasAuthorship W2905682772A5006822602 @default.
• W2905682772 hasAuthorship W2905682772A5021941803 @default.
• W2905682772 hasAuthorship W2905682772A5046705365 @default.
• W2905682772 hasAuthorship W2905682772A5054018432 @default.
• W2905682772 hasAuthorship W2905682772A5067538622 @default.
• W2905682772 hasAuthorship W2905682772A5086010002 @default.
• W2905682772 hasConcept C113196181 @default.
• W2905682772 hasConcept C119599485 @default.
• W2905682772 hasConcept C121332964 @default.
• W2905682772 hasConcept C127413603 @default.
• W2905682772 hasConcept C133386390 @default.
• W2905682772 hasConcept C165801399 @default.
• W2905682772 hasConcept C166972891 @default.
• W2905682772 hasConcept C171250308 @default.
• W2905682772 hasConcept C172385210 @default.
• W2905682772 hasConcept C178790620 @default.
• W2905682772 hasConcept C185592680 @default.
• W2905682772 hasConcept C192562407 @default.
• W2905682772 hasConcept C2779227376 @default.
• W2905682772 hasConcept C33574316 @default.
• W2905682772 hasConcept C49040817 @default.
• W2905682772 hasConceptScore W2905682772C113196181 @default.
• W2905682772 hasConceptScore W2905682772C119599485 @default.
• W2905682772 hasConceptScore W2905682772C121332964 @default.
• W2905682772 hasConceptScore W2905682772C127413603 @default.
• W2905682772 hasConceptScore W2905682772C133386390 @default.
• W2905682772 hasConceptScore W2905682772C165801399 @default.
• W2905682772 hasConceptScore W2905682772C166972891 @default.
• W2905682772 hasConceptScore W2905682772C171250308 @default.
• W2905682772 hasConceptScore W2905682772C172385210 @default.
• W2905682772 hasConceptScore W2905682772C178790620 @default.
• W2905682772 hasConceptScore W2905682772C185592680 @default.
• W2905682772 hasConceptScore W2905682772C192562407 @default.
• W2905682772 hasConceptScore W2905682772C2779227376 @default.
• W2905682772 hasConceptScore W2905682772C33574316 @default.
• W2905682772 hasConceptScore W2905682772C49040817 @default.
• W2905682772 hasFunder F4320321543 @default.
• W2905682772 hasIssue "2" @default.
• W2905682772 hasLocation W29056827721 @default.
• W2905682772 hasOpenAccess W2905682772 @default.
• W2905682772 hasPrimaryLocation W29056827721 @default.
• W2905682772 hasRelatedWork W1653850628 @default.
• W2905682772 hasRelatedWork W1971610900 @default.
• W2905682772 hasRelatedWork W1979667404 @default.
• W2905682772 hasRelatedWork W2050276466 @default.
• W2905682772 hasRelatedWork W2071802557 @default.
• W2905682772 hasRelatedWork W2079971677 @default.
• W2905682772 hasRelatedWork W2126685667 @default.
• W2905682772 hasRelatedWork W2315229456 @default.
• W2905682772 hasRelatedWork W2740503505 @default.

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