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- W2906056310 abstract "Red-emitting InxGa1−xN/InyGa1−yN quantum wells (x > 0.2, y ∼ 0.17) are grown on ScAlMgO4(0001) substrates with lattice-matched InyGa1−yN templates. The ratio of the photoluminescence (PL) intensity at room temperature against that at 11 K is 0.14 for a red-emitting InxGa1−xN/InyGa1−yN QW on a ScAlMgO4 substrate, whereas that for a conventional InxGa1−xN/GaN QW on a sapphire(0001) substrate is 0.004. The lattice-matched InyGa1−yN/ScAlMgO4 template generates a remarkable improvement in internal quantum efficiency. Additionally, the spatial uniformity of PL is also drastically improved, showing promise as long wavelength emitters." @default.
- W2906056310 created "2019-01-01" @default.
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- W2906056310 date "2018-12-20" @default.
- W2906056310 modified "2023-10-17" @default.
- W2906056310 title "Red-emitting In<sub> <i>x</i> </sub>Ga<sub>1−<i>x</i> </sub>N/In<sub> <i>y</i> </sub>Ga<sub>1−<i>y</i> </sub>N quantum wells grown on lattice-matched In<sub> <i>y</i> </sub>Ga<sub>1−<i>y</i> </sub>N/ScAlMgO<sub>4</sub>(0001) templates" @default.
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- W2906056310 doi "https://doi.org/10.7567/1882-0786/aaf4b1" @default.
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