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- W2906626812 abstract "WSi2 nanocrystal nanofloating gate capacitors with multistacked Si3N4/HfAlO high-k tunnel layers were fabricated and their electrical properties were characterized. The thicknesses of the Si3N4 and HfAlO tunnel layers were 1.5 and 3 nm, respectively. The asymmetrical Si3N4/HfAlO tunnel layer was modulated to enhance the tunneling efficiency to improve program and erase speeds. The flat-band voltage shift of the WSi2 nanofloating gate capacitor was about 7.2 V after applied voltages swept were from -10 to 10 V and from 10 to -10 V. Then, the program/erase speeds and the memory window under programming and erasing at ±7 V were 300 µs and 1 V, respectively. As demonstrated in the results, the WSi2 nanocrystal memory with barrier-engineered Si3N4/HfAlO layers could be applied to enhance the program and erase speeds at low operating voltages for nanocrystal nonvolatile memory application." @default.
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- W2906626812 date "2012-06-01" @default.
- W2906626812 modified "2023-10-17" @default.
- W2906626812 title "Speed Enhancement of WSi2Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer" @default.
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- W2906626812 doi "https://doi.org/10.7567/jjap.51.06fe13" @default.
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